MMBD2004S
Document number: DS30281 Rev. 12 - 2
2 of 4
www.diodes.com
August 2012
? Diodes Incorporated
MMBD2004S
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
300
V
Working Peak Reverse Voltage
DC Blocking Voltage
VRWM
VR
240
V
RMS Reverse Voltage
VR(RMS)
170
V
Forward Continuous Current (Note 5)
IFM
225
mA
Peak Repetitive Forward Current (Note 5)
IFRM
625
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
350
mW
Thermal Resistance Junction to Ambient Air (Note 5)
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
°C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
300
?
V
IR
= 100μA
Forward Voltage
VF
?
0.87
1.0
V
IF
= 20mA
IF
= 100mA
Reverse Current (Note 6)
IR
?
100
nA
μA
VR
= 240V
VR
= 240V, T
J
= +150
°C
Total Capacitance
CT
?
5.0
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
50
ns
IF
= I
R
= 30mA,
Irr = 3.0mA, RL
= 100
Ω
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
0
0
120
80
40
160
200
T , AMBIENT TEMPERATURE (oC)A
Figure 1 Power Derating Curve, Total Package
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
100
200
300
400
500
0
400 800 1,200
1,600 2,000
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
F
m
V , INSTANTANEOUS FORWARD VOLTAGE (mV)F
Figure 2 Typical Forward Characteristics, Per Element
100
1.0
10
0.1
0.01
1,000
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相关代理商/技术参数
MMBD2004S_08 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
MMBD2004S_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE
MMBD2004S-7 功能描述:二极管 - 通用,功率,开关 240V 350mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD2004S-7-F 功能描述:二极管 - 通用,功率,开关 240V 350mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD2004SW 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT SWITCHING DIODE
MMBD2004SW_08 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT SWITCHING DIODE
MMBD2004SW-7 功能描述:二极管 - 通用,功率,开关 250MW 240V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD2004SW-7-F 功能描述:二极管 - 通用,功率,开关 250MW 240V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube